SineSemi (中晶新源) Recognized for Contribution to Humanoid Robot Testing and Certification

SineSemi (中晶新源) has received a Special Contribution Award (特别贡献奖) from China's National Humanoid Robot Testing and Certification Working Group (国家人形机器人测试与认证工作组) for its support of the humanoid-robot testing and certification ecosystem.

The recognition was presented following the Working Group's sixth meeting, held in Hangzhou on December 25, 2025. According to SineSemi, the meeting brought together more than 80 representatives from government, research institutions, universities and industry to discuss the continued development of humanoid-robot standards, testing methods and certification frameworks.

SineSemi states that it has participated in the development of standards for humanoid-robot integrated joints and related testing and certification work.

Power semiconductors in humanoid robotics

Humanoid robots combine electrically driven joints, motors and power-conversion stages in a compact platform. These systems place demanding requirements on power electronics, including current capability, conduction loss, switching behaviour, packaging, thermal performance and reliability under repeated dynamic loading.

SineSemi positions its Shielded Gate Trench (SGT) MOSFET portfolio for applications including:

• joint motor drives;
• DC-DC power management;
• lithium-battery protection and battery-management systems;
• other low- and medium-voltage power stages used in humanoid robots.

According to SineSemi, its SGT MOSFETs have been introduced in humanoid-robot applications, with device selections tailored to the power and operating requirements of different joints and subsystems.

Supporting the emerging humanoid-robot ecosystem

As humanoid robots move from prototypes toward wider industrial and commercial deployment, semiconductor selection can influence system efficiency, thermal management, power density and operating reliability.

SineSemi says it plans to continue working with the Working Group on testing and certification standards and on the development of semiconductor solutions for humanoid-robot applications.

For Curve Semiconductors, the announcement provides a practical example of how modern SGT MOSFET technology can be applied in high-current motor-control and compact power-conversion systems.

Technology context: SGT and Superjunction

SGT MOSFETs are generally used in low- to medium-voltage applications where low on-resistance, high current density and controlled switching characteristics are important. Superjunction MOSFETs address a different challenge: reducing the resistance penalty associated with high-voltage silicon switching.

Readers can explore the underlying device structures and their different operating regions in Curve's Power Design Insight:

SGT vs Superjunction MOSFET: What They Are and Why They Serve Different Voltage Ranges

Award information, participation statements, application claims and product-positioning statements in this article are based on information supplied by SineSemi (中晶新源). Curve Semiconductors has not independently verified those claims.