SineSemi (中晶新源) SMT4001AHP SGT MOSFET Receives 2026 China Strong Chip (2026中国强芯) Market Pioneer Award

SineSemi (中晶新源) has received the 2026 China Strong Chip (2026中国强芯) Market Pioneer Award (市场先锋奖) for its SMT4001AHP N-channel Shielded Gate Trench (SGT) MOSFET.

The award was announced on August 20 during the ICDIA Innovation Conference (ICDIA创芯大会) in Nanjing.

The 2026 China Strong Chip Awards (2026中国强芯评选) are organized by the China Integrated Circuit Design Innovation Alliance (中国集成电路设计创新联盟) to recognize domestically developed semiconductor products with technology competitiveness and application value. According to the award description provided by SineSemi, the Market Pioneer Award (市场先锋奖) focuses on products that have achieved meaningful technology or application breakthroughs together with strong customer recognition and scaled market adoption.

SMT4001AHP: SGT technology for high-current motor applications

According to SineSemi (中晶新源), the SMT4001AHP combines its proprietary IDOS SGT technology (IDOS SGT专利技术) with a safety-redundancy device design and high-power thermal packaging.

SineSemi reports the following device characteristics:

• Typical RDS(on) as low as 1.2 mΩ
• Continuous current capability of up to 212 A at 25°C
• Low gate charge Qg
• Low Crss/Ciss ratio to support EMI optimization
• Wide Safe Operating Area (SOA)
• Safety-redundancy design intended to improve robustness under demanding motor conditions

These characteristics are aimed at high-current applications where conduction loss, switching behaviour, thermal management and transient robustness must be considered together.

Designed around demanding motor operating conditions

SineSemi states that the SMT4001AHP has been optimized for motor applications where MOSFETs may experience substantial electrical stress during events such as:

• acceleration and deceleration;
• overload;
• motor stall;
• rapid shutdown;
• high-current transient conditions.

The company positions the device around a combination of high efficiency, high power density, lower power loss and lower temperature rise, while maintaining switching characteristics suitable for motor-control systems.

From device technology to market adoption

SineSemi describes the SMT4001AHP as one of its key SGT products and reports that the device has entered volume applications across multiple market segments and has undergone validation by leading customers.

The Market Pioneer Award (市场先锋奖) reflects both the technology development behind the device and its reported progress in commercial applications.

For Curve Semiconductors, the announcement also provides a useful real-world example of how modern Shielded Gate Trench (SGT) technology is being applied in low- and medium-voltage, high-current power systems.

Technology context: SGT and Superjunction

SGT MOSFETs are generally optimized for low- to medium-voltage applications where very low on-resistance, high current density and controlled switching parasitics are important. Superjunction MOSFETs address a different challenge: reducing the resistance penalty associated with high-voltage silicon switching.

Readers can explore the underlying device structures and their different operating regions in Curve's Power Design Insight:

SGT vs Superjunction MOSFET: What They Are and Why They Serve Different Voltage Ranges

For product enquiries, device information or application discussions relating to SGT MOSFET solutions, customers can contact Curve through the website.

Technical performance, market-adoption statements and award information in this article are based on information supplied by SineSemi (中晶新源). Curve Semiconductors has not independently certified the quoted device performance or market claims.