Curve Semiconductors

SineSemi (中晶新源) has announced that three of its SGT power semiconductor products have been shortlisted for the 2026 World Electronics Achievement Awards (全球电子成就奖) in the Power Semiconductor Product of the Year (年度功率半导体产品) category.

The three devices address three fast-developing power-electronics areas: AI server power, data-center power conversion and high-power robotic joint drives.

Three shortlisted SGT products

SMT8001AHP — 80V SGT for AI server power

The SMT8001AHP is an 80V SGT MOSFET targeted at AI-server power applications.

According to SineSemi, the device uses a compact PDFN5060 package and achieves typical on-resistance of approximately 1.2 mΩ. SineSemi also reports that the device has been validated by multiple power-supply customers and has entered volume production.

The device reflects the growing emphasis on low conduction loss, compact packaging and thermal margin as AI computing platforms continue to increase power density.

SMT4501ALRNSCG — 45V high-frequency SGT for data-center IBC power

The SMT4501ALRNSCG is a 45V SGT device aimed at Intermediate Bus Converter (IBC) brick power architectures in data-center infrastructure.

SineSemi highlights its DFN3333-8L-SCG package, including double-sided heat dissipation and a source-down configuration. The company positions this packaging approach around thermal performance, switching behaviour and conversion efficiency for next-generation AI infrastructure.

As data-center power density rises, semiconductor performance and package parasitics increasingly have to be considered together at the complete power-stage level.

SMT13T02AHTL — 135V TOLL SGT for robotic joint motors

The SMT13T02AHTL is a 135V N-channel SGT MOSFET developed for high-power motor-drive applications including robotic and quadruped joint systems.

SineSemi reports on-resistance as low as 1.70 mΩ, combining its proprietary IDOS technology with a high-performance TOLL package.

The company highlights several design priorities for highly dynamic motor systems:

wide Safe Operating Area (SOA) and transient robustness;
low parasitic inductance;
low reverse-recovery charge Qrr;
support for higher-frequency switching;
reduced switching loss and voltage overshoot;
improved system efficiency and thermal performance.

These characteristics are particularly relevant to joint motors exposed to rapid acceleration, braking, jumping and other highly dynamic load conditions.

SGT moving into new high-power-density applications

Taken together, the three shortlisted products show how SGT technology is being applied across a widening group of power-dense systems:

AI server power → data-center IBC conversion → robotics and Physical AI

Across these applications, the design challenge is increasingly similar: reduce conduction and switching losses while managing package parasitics, thermal density and reliability.

SineSemi states that its broader technology platform spans SGT, SiC and GaN, with applications extending across AI power, drones, robotics, energy storage and automotive electronics.

Technology context

For readers interested in how SGT fits within the wider power-semiconductor landscape, Curve’s Power Design Insights provide additional background:

SGT vs Superjunction MOSFET: What They Are and Why They Serve Different Voltage Ranges

Why Power Electronics Is Moving Toward SiC and GaN

For product information, samples or application discussions relating to SGT power devices, customers can contact Curve Semiconductors through the website.

Award-shortlist status, product specifications, production status and application-performance statements in this article are based on information supplied by SineSemi (中晶新源). Curve Semiconductors has not independently certified those claims.